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MST51512L-LF More Information

D/C: 06+


• High to low side isolation of 1000V • Common-mode dv/dt immunity of greater than   50V/nanosecond • On-chip generated negative gate drive • Overcurrent protection by means of desaturation   detection • Under voltage lockout • Fault indication output for system diagnostic • Optimized power circuit layout • High side bootstrap supply • Sockets for freewheeling fast recovery diodes   (FREDS) • Flexibility of power level utilization • 5V compatible HCMOS input logic with hysterisis • Protection from cross conduction of the half   bridge • Simple, fast and low cost means of evaluation   and design • Option for using IXDP630 with RC oscillator or   IXDP631 with crystal oscillator for improved dead   time accuracy. • Three phase operation with the ability to attach   additional slave driver boards.
 MST51512L-LF PDF Download


File Size:14719 KB


Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 210 mV at an output current of 2 A for the TPS75x33Q) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 75 µA over the full range of output current, 1 mA to 2 A). These two key specifications yield a significant improvement in operating life for battery-powered systems.


The Application Engineering group is available to assist you with the technical understanding associated with MST51512L-LF infrared transceiver module. You can contact them through your local sales representatives for additional details.

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MST51512L-LF Suppliers

Part Number Mfg Pack D/C Qty Description Inquiry
MST51512L-LF 06+ 06+ TQFP 257
MST51512L-LF 06+ 06+ TQFP P/B 257
MST51512L-LF 06+ 06+ TQFP P/B 262 original new
MST51512L-LF 0527 0527 30
MST51512L-LF 0622+ 0622+ QFP128 150
MST51512L-LF 288
MST 00376 03+ 03+ SOP 300 Available,Ask Eric
MST001RS 95+ 95+ DIP 2515
MST00376 0 3015
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