| Parr number/PDF | Mfg | Pack | D/C | Descrpion |
| K4S160822DTC10 K4S160822DTC10 |
properties. Used for insulation and protection | |||
| K4S160822D-TC10 K4S160822D-TC10 |
SAMSUNG | 02+/03+ | No External Components Required Internal Voltage | |
| K4S160822DTC1H K4S160822DTC1H |
(2) Those contemplating using the products cover | |||
| K4S160822D-TC1H K4S160822D-TC1H |
SAMSUNG | TSOP | 02+ | Ordering Information A complete part number is |
| K4S161620HTC-60 K4S161620HTC-60 |
NOTE 1. The HDQ engine of the bq26220 interpret | |||
| K4S161620H-UC60 K4S161620H-UC60 |
Maximale Streuung des Widerstandswertes bei der | |||
| K4S161622 K4S161622 |
Motorola reserves the right to make changes with | |||
| K4S1616220-TC60 K4S1616220-TC60 |
SAMSUNG | 0341 | DESCRIPTION This MOSFET series realized with ST | |
| K4S1616220-TC70 K4S1616220-TC70 |
SOP | ♦ Direct IF Sampling Up to 400MHz ♦ | ||
| K4S1616220-TC80 K4S1616220-TC80 |
SOP | A detailed block diagram of the UCC3941 is shown | ||
| K4S1616220TC80ES K4S1616220TC80ES |
Note 4: Regulation is measured at constant juncti | |||
| K4S161622D K4S161622D |
SAMSUNG | TSOP-50 | 08+ | The 1-wire serial communication port (5Kb/s) all |
| K4S161622D-70TC K4S161622D-70TC |
SAMSUNG | 00+ | Bidirectional I/O lines. Software instructions de | |
| K4S161622D-TC10 K4S161622D-TC10 |
01 | Signal input pin. An internal matching circuit, | ||
| K4S161622D-TC101X16 K4S161622D-TC101X16 |
SAMSUNG | TSOP | 2.0% output accuracy (25˚C) Low dropout v | |
| K4S161622DTC60 K4S161622DTC60 |
SAMSUNG | TSOP | 04+ | CAUTION ESD (electrostatic discharge) sensitive |
| K4S161622D-TC60 K4S161622D-TC60 |
SAMSUNSG | 01/02 | ||
| K4S161622D-TC-60 K4S161622D-TC-60 |
Note: (1) The minimum DC input voltage is C0.5 | |||
| K4S161622DTC-60 K4S161622DTC-60 |
Seven different colors are avail- able: green, | |||
| K4S161622D-TC60T00 K4S161622D-TC60T00 |
Lets look at what determines the output frequenc | |||
| K4S161622DTC70 K4S161622DTC70 |
The HSMS-270x series of clipping/clamping diodes | |||
| K4S161622D-TC70 K4S161622D-TC70 |
SAMSUNG | Contact the factory to check availability of othe | ||
| K4S161622DTC-70 K4S161622DTC-70 |
• Asynchronous loading of control paramete | |||
| K4S161622DTC-8 K4S161622DTC-8 |
SAMSUMG | SRAM | 2000 | − Timer 1: Offers auto-reload functi |
| K4S161622DTC80 K4S161622DTC80 |
SAM | TSSOP | 00+ | When replacing the OPA501, OPA511, OPA512 |
| K4S161622D-TC80 K4S161622D-TC80 |
SAM | TSOP | 01+ | The K4S161622D-TC80 is a low current, low voltage |
| K4S161622DTC-80 K4S161622DTC-80 |
This low failure rate represents dat | |||
| K4S161622D-TC80(SDRAM1M16) K4S161622D-TC80(SDRAM1M16) |
LIFE SUPPORT POLICY Integrated Device Te | |||
| K4S161622DTC80000 K4S161622DTC80000 |
In FWFT mode, the first word written to a | |||
| K4S161622D-TC801X16 K4S161622D-TC801X16 |
Output Enable, asynchronous input, active LOW. C | |||
| K4S161622D-TI80T00 K4S161622D-TI80T00 |
Samsung | 0129 | 19 | I Controlled Output Slew Rate I Low Output-Satur |
| K4S161622E-TC60 K4S161622E-TC60 |
SAMSUNG | TSOP-50 | These amplifiers are manufactured using a Silicon | |
| K4S161622E-TC70 K4S161622E-TC70 |
SAMSUNSG | 01 | These chips, when properly assembled, display ch | |
| K4S161622E-TC80 K4S161622E-TC80 |
SAMSUNG | TSOP-50 | The ISL6118 has integrated current sensing on the | |
| K4S161622E-TC80T00 K4S161622E-TC80T00 |
• Four Crystal modes, up to 25 MHz • | |||
| K4S161622E-TI80 K4S161622E-TI80 |
SAMSUNG | The transceiver is fully compatible with the IEE | ||
| K4S161622E-UC80 K4S161622E-UC80 |
SAM | 03+ | 12 parallel channels, total 32.6 Gbps capacity D | |
| K4S161622HTC60 K4S161622HTC60 |
?Samsung | 04+ | LINEAR GCI MODE In GCI linear mode, one G | |
| K4S161622H-TC60 K4S161622H-TC60 |
SAMSUNG | N/A | 05+ | • Live Insertion and Removal Power Manager |
| K4S161622HTC-60 K4S161622HTC-60 |
Due to technical requirements components may con | |||
| K4S161622H-TC60(1M16) K4S161622H-TC60(1M16) |
The receiver section of the PI90SD1636A accepts | |||
| K4S161622HTC60000 K4S161622HTC60000 |
Figure 3 describes the noise model for the non-i | |||
| K4S161622H-TC60000 K4S161622H-TC60000 |
SAMSUNG | 07+ | The inputs to the PIM consist of all I/O and dedi | |
| K4S161622H-TC60T K4S161622H-TC60T |
The DLYBLK input can be used to halt address gen | |||
| K4S161622H-TC6O K4S161622H-TC6O |
SAMSUNG | 04+ | plex Instruction Set Computer (CISC): compact cod | |
| K4S161622H-TC70 K4S161622H-TC70 |
SAMSUNG | AGC and low-pass filtered video should be brough | ||
| K4S161622H-TC75 K4S161622H-TC75 |
SAMSUNG | TSOP | 04+ | This advanced power MOSFET is designed, tested, |
| K4S161622H-TC80 K4S161622H-TC80 |
SAMSUNG | TSOP | 04+ | 500 watt Peak Pulse Power protection at 8/20 &mic |
| K4S161622HUC60 K4S161622HUC60 |
?Samsung | 04+ | This series of optically coupled isolators consi | |
| K4S161622H-UC60 K4S161622H-UC60 |
SAMSUNG | N/A | 06+ | A bill of materials for the evaluation board is |
| K4S161622H-UC60000 K4S161622H-UC60000 |
SAMSUNG | 07/08+ | A non-volatile marker is automatically inserted a | |
| K4S161622H-UC70 K4S161622H-UC70 |
SAMSUNG | Chip Select: Enables or disables all inputs excep | ||
| K4S161622H-UC80 K4S161622H-UC80 |
SAMSUNG | Test levels: (A) 100% tested at 25C. Overtempera | ||
| K4S161622H-UC80000 K4S161622H-UC80000 |
ESD damage can range from subtle performance deg | |||
| K4S161622TE-TC80 K4S161622TE-TC80 |
Hynix HYMD512G726(L)4-K/H/L series is designed fo | |||
| K4S161632H-TC60 K4S161632H-TC60 |
(0) After power on, the first integration scan is | |||
| K4S280432A-TC1L K4S280432A-TC1L |
SAMSUNG | TSOP | 03+ | In order for Xinger surface mount components to w |
| K4S280432D-TC75 K4S280432D-TC75 |
SAMSUNG | TSOP | 03+ | 1.1 Scope. This specification covers the |
| K4S280432E-TC75 K4S280432E-TC75 |
SAMSUNG | TSOP | 03+ | The HEF4093B consists of four Schmitt-trigger ci |
| K4S280432F-TC75 K4S280432F-TC75 |
SAMSUNG | TSOP | 03+ | 2. Data labelled Typ is not to be used for desig |
| K4S280432I-UC75 K4S280432I-UC75 |
Pin 14 is the video output pin. Since the | |||
| K4S2808320-TC1L K4S2808320-TC1L |
SAMSUNG | TSOP | 00+ | The IC also includes 4 readable input (I1..I4) p |
| K4S2808320-TC75 K4S2808320-TC75 |
SAMSUNG | TSOP | 01+ | DX1 is available on the TP3070 only; DX0 is ava |
| K4S280832A-TC1L K4S280832A-TC1L |
SAMSUNG | TSOP | 03+ | Output Swing Includes Both Supply Rails Low Nois |
| K4S280832B-TC1L K4S280832B-TC1L |
ANALOG-TO-DIGITAL CONVERTER (INCLUDING MUX AND A | |||
| K4S280832B-TC75 K4S280832B-TC75 |
SamSung | STK | 2003+ | No Glitch on Power Up Supports Hot Insertion Lo |
| K4S280832B-TL1L K4S280832B-TL1L |
SAMSUNG | 00+ | The SST49LF080A flash memory device is manufactu | |
| K4S280832C-TC1H K4S280832C-TC1H |
SAMSUNG | TSOP | 03+ | 2. MATERIAL: Units are encapsulated in a low the |
| K4S280832C-TC1L K4S280832C-TC1L |
SAMSUNG | TSOP | 03+ | Flexible inputs and outputs all grou |
| K4S280832CTC75 K4S280832CTC75 |
4.4.2 Group B inspection. Group B inspect | |||
| K4S280832C-TC75 K4S280832C-TC75 |
SAMSUNG | TSOP | 03+ | Complete System Solution for interfacing SmartMe |
| K4S280832D-TC75 K4S280832D-TC75 |
SAMSUNG | In conjunction with monitoring VSR for charge/dis | ||
| K4S280832D-TL1H K4S280832D-TL1H |
SAMSUNG | TSOP | 03+ | The ADSP-21262 features an enhanced Harvard arch |
| K4S280832ETC75 K4S280832ETC75 |
Description Reference Voltage 1 Vo | |||
| K4S280832E-TC75 K4S280832E-TC75 |
SAM | TSOP | 0352+ | |
| K4S280832F-TC75 K4S280832F-TC75 |
SAMSUNG | TSOP | 03+ | Note 2: Absolute Maximum continuous ratings are t |
| K4S280832F-UC75 K4S280832F-UC75 |
SAMSUNG | TSOP | 06+ | Step up converter (Boost Voltage) Boost Over- |
| K4S280832IUC75 K4S280832IUC75 |
The 0.057 OHM term takes into account any | |||
| K4S280832I-UC75 K4S280832I-UC75 |
?Samsung | 06+ | Control of the device is via a simple high speed | |
| K4S280832IUC75000 K4S280832IUC75000 |
Speech and music synthesis requires on-chip or of | |||
| K4S281620FTC-75 K4S281620FTC-75 |
||||
| K4S281632 K4S281632 |
SAMSUNG | Specifically designed for Automotive application | ||
| K4S281632B-NC1H K4S281632B-NC1H |
SamSung | STK | 2003+ | Port 3 Port 3 is an 8-bit bidirectional I O port |
| K4S281632B-NLIL K4S281632B-NLIL |
SAMSUNG | TSSOP-54 | 03+ | interoperability and reliability risks. Integrat |
| K4S281632B-TC10 K4S281632B-TC10 |
SAMSUNG | TSOP | 03+ | Note 2: All characteristics are measured with cap |
| K4S281632B-TC1H K4S281632B-TC1H |
SAMSUNG | . | 05+ | 12bit input, Black Level, White Balance Filter |
| K4S281632B-TC1L K4S281632B-TC1L |
SAMSUNG | TSSOP-54 | In addition to transmitting configuration data t | |
| K4S281632B-TC75 K4S281632B-TC75 |
SAMSUNG | TSOP | 03+ | An on-chip Peripheral Data Controller (PDC) tran |
| K4S281632B-TC75000 K4S281632B-TC75000 |
E1 is the hexadecimal address for the CMX866 Tran | |||
| K4S281632B-TC80 K4S281632B-TC80 |
SAMSUNG | TSOP | 03+ | This surface mount Transient Voltage Suppressor ( |
| K4S281632B-TE1L K4S281632B-TE1L |
Available parts are detailed in the ordering inf | |||
| K4S281632B-TL K4S281632B-TL |
SAMSUNG | TSOP | 00+ | Sensitivity: A magnetic south pole at and perpend |
| K4S281632B-TL10 K4S281632B-TL10 |
SAMSUNG | TSOP | 03+ | The blocks in the memory are asymmetrically ar- |
| K4S281632B-TL1H K4S281632B-TL1H |
SAMSUNG | TSOP | 03+ | Test data input. One of four terminals required |
| K4S281632B-TL1L K4S281632B-TL1L |
SAMSUNG | TSOP | 03+ | Notes: 1. D Q -to-I/O wiring is shown as recom m |
| K4S281632B-TL75 K4S281632B-TL75 |
SAMSUNG | TSOP | 03+ | Ultrasmall package facilitates miniaturization i |
| K4S281632B-TL80 K4S281632B-TL80 |
SAMSUNG | TSOP | 03+ | q Operating Voltage8 to 10 V 2q I C BUS |
| K4S281632C-NC1H K4S281632C-NC1H |
SAMSUNG | TSOP | 0528+ | 1. If lead-bearing terminal plating is required, |
| K4S281632C-NL75 K4S281632C-NL75 |
SAMSUNG | The device also has 64 I/O cells, each of which | ||
| K4S281632C-TC1H K4S281632C-TC1H |
SAMSUNG | TSOP | 2001 | Absolute maximum ratings define parameter limits |
| K4S281632C-TC1L K4S281632C-TC1L |
SAMSUNG | TSOP | 04+ | Maxwell Technologies 28LV010 high density, 3.3V, |
| K4S281632C-TC1L000 K4S281632C-TC1L000 |
Note 4: The maximum power dissipation must be der | |||
| K4S281632C-TC75 K4S281632C-TC75 |
N/A | N/A | N/A | 4.3.2 Thermal response (∆VBE measur |
| K4S281632C-TCH K4S281632C-TCH |
SAMSUNG | TSOP54 | Built-in power save circuit Built-in current l | |
| K4S281632C-TI1H K4S281632C-TI1H |
SAMSUNG | TSOP | 03+ | 150V Power Schottky rectifier are suited for swi |
| K4S281632C-TI1L K4S281632C-TI1L |
SAMSUNG | TSOP | 03+ | 7KH 3UHOLPLQDU\ GHVLJQDWLRQ LQGLFDWHV WKDW WKH S |
| K4S281632C-TI75 K4S281632C-TI75 |
In case the HT9142 is battery powered, when the p | |||
| K4S281632C-TL1H K4S281632C-TL1H |
SAMSUNG | TSOP | 03+ | The AD9949 is a highly integrated CCD signal pro |
| K4S281632C-TL1L K4S281632C-TL1L |
SAMSUNG | TSOP | 03+ | 2Mbit of Page-Erasable Flash Memory Page Write |
| K4S281632C-TL75 K4S281632C-TL75 |
SAMSUNG | TSSOP-54 | 97P3 | PARAMETER Current Limit Section CS Threshold Se |
| K4S281632D K4S281632D |
SAM | SSOP | 02+ | Notes: 1. Stress greater than those listed unde |
| K4S281632D-NC1H K4S281632D-NC1H |
SAMSUNG | TSOP | 04+ | A Deep Power-Down Mode is enabled when the RP pi |
| K4S281632D-NL75 K4S281632D-NL75 |
Acquisition Time (tacq). The delay between the t | |||
| K4S281632D-NL75(8M16) K4S281632D-NL75(8M16) |
SAMSUNG | TSSOP | 03+ | Note: Stresses greater than those listed under |
| K4S281632D-NU1L K4S281632D-NU1L |
Mega-pixel class image quality is achieved by int | |||
| K4S281632D-TC1H K4S281632D-TC1H |
SAMSUNG | TSOP | 03+ | To perform a practical return loss measurement, i |
| K4S281632DTC1L K4S281632DTC1L |
LO IN=-4dBm See note 1. Mixer Preamp ON Mixer | |||
| K4S281632D-TC1L K4S281632D-TC1L |
SAMSUNG | TSOP | 03+ | TheK4S281632D-TC1Lxxxfamilyofmicroprocessor supe |
| K4S281632D-TC55 K4S281632D-TC55 |
SAMSUNG | TSOP | 03+ | The MCF5249 is also an excellent general purpose |
| K4S281632D-TC60 K4S281632D-TC60 |
SAMSUNG | TSOP | 03+ | |
| K4S281632D-TC70 K4S281632D-TC70 |
SAMSUNG | TSOP | 03+ | TEMPERATURE PROTECTION The thermal prote |
| K4S281632DTC75 K4S281632DTC75 |
Stable with No Output Capacitor or Any Value or | |||
| K4S281632D-TC75 K4S281632D-TC75 |
SAM | 04+ | Following the successful acknowledgement of the | |
| K4S281632DTC75T K4S281632DTC75T |
sam | sam | dc03 | Note: (1) This parameter is tested initially an |
| K4S281632D-TI1H K4S281632D-TI1H |
SAMSUNG | TSOP | 03+ | PAGE READ: The page read operation of the device |
| K4S281632D-TI75 K4S281632D-TI75 |
SAMSUNG | TSOP | 03+ | Multi-function Input One (1): If Mode = L (m68 |
| K4S281632D-TL1H K4S281632D-TL1H |
SAMSUNG | TSOP | 03+ | The JEDEC low-K (1s) board design used to derive |
| K4S281632D-TL55 K4S281632D-TL55 |
SAMSUNG | TSOP | 03+ | The bq2014 determines battery capacity by monitor |
| K4S281632D-TL60 K4S281632D-TL60 |
SAMSUNG | TSOP | 03+ | |
| K4S281632D-TL70 K4S281632D-TL70 |
SAMSUNG | TSOP | 03+ | Sending the WREN op-code causes the internal Wri |
| K4S281632DTL75 K4S281632DTL75 |
The C-suffix devices are characterized for opera | |||
| K4S281632D-TL75 K4S281632D-TL75 |
SAMSUNG | TSOP | 03+ | |
| K4S281632D-TP75 K4S281632D-TP75 |
SAMSUNG | TSOP | 03+ | All modules are potted and identical in pin-out |
| K4S281632D-UC75 K4S281632D-UC75 |
SAMSUNG | TSOP | 06+ | Drain-to-Source Breakdown Voltage Gate Threshol |
| K4S281632ETC1L K4S281632ETC1L |
4. When Fail Soft operation is detected, regulat | |||
| K4S281632E-TC60 K4S281632E-TC60 |
SAMSUNG | TSOP | 03+ | Rev. A Information furnished by Analog Devices |
| K4S281632ETC75 K4S281632ETC75 |
SAMSUNG | TSOP | 04+/03+ | Microstrip Series Connection for HSMP-482x Serie |
| K4S281632E-TC75 K4S281632E-TC75 |
03+ | The transmitter converts electrical PECL compati | ||
| K4S281632E-TC75) K4S281632E-TC75) |
||||
| K4S281632E-TC75000 K4S281632E-TC75000 |
COP8™, MICROWIRE/PLUS™, and WATCHDOG& | |||
| K4S281632E-TC75T K4S281632E-TC75T |
The external oscillator mode can also be used wi | |||
| K4S281632E-TC75T00 K4S281632E-TC75T00 |
Performs the PHY-Transmission Convergence (TC) a | |||
| K4S281632E-TL1H K4S281632E-TL1H |
SAMSUNG | 03+ | H = high level, L = low level, X = dont care, h | |
| K4S281632E-TL1L K4S281632E-TL1L |
The K4S281632E-TL1LB and K4S281632E-TL1L s | |||
| K4S281632E-TL75 K4S281632E-TL75 |
SAMSUNG | TSOP | 03+ | Notes: 1. Specifications measured with one outp |
| K4S281632E-UC75 K4S281632E-UC75 |
SAMSUNG | TSOP | 06+ | Stresses above those listed under Absolute Maxim |
| K4S281632FTC60 K4S281632FTC60 |
5. Dropout is defined as either the minimum cont | |||
| K4S281632F-TC60 K4S281632F-TC60 |
SAMSUNG | TSOP | 03+ | Modulation is applied to the VCO and is b |
| K4S281632FTC60000 K4S281632FTC60000 |
Communications between backplanes, modules and h | |||
| K4S281632FTC75 K4S281632FTC75 |
?Samsung | 04+ | ||
| K4S281632F-TC75 K4S281632F-TC75 |
SAMSUNG | N/A | 05+ | • Self time write cycle with auto clear & |
| K4S281632F-TC75(8M16) K4S281632F-TC75(8M16) |
Precision Optical Performance AlInGaP II (alumin | |||
| K4S281632F-TC75000 K4S281632F-TC75000 |
Note 7: This parameter is guaranteed by design bu | |||
| K4S281632F-TC75T K4S281632F-TC75T |
Signal data can be accepted at rates up to rxclk | |||
| K4S281632F-TC75T00 K4S281632F-TC75T00 |
Sector/page erase is a six bus cycles operation. | |||
| K4S281632F-TI75 K4S281632F-TI75 |
SAMSUNG | TSOP54 | 2.5V power supply LVCMOS compatible with multipl | |
| K4S281632F-TI75000 K4S281632F-TI75000 |
The microprocessor can program the a8237 when th | |||
| K4S281632F-TL75 K4S281632F-TL75 |
SAMSUNG | TSOP | 03+ | New AD9949A supports CCD line length > 4096 p |
| K4S281632F-TP75 K4S281632F-TP75 |
The microphone input is a switchable interface f | |||
| K4S281632F-UC60 K4S281632F-UC60 |
SAMSUNG | N/A | 05+ | HSMS-2820 series of diodes is the best all-arou |
| K4S281632F-UC60000 K4S281632F-UC60000 |
• True Dual-Ported memory cells which allow | |||
| K4S281632FUC75 K4S281632FUC75 |
?Samsung | 04+ | Input Pin for Overvoltage and Undervoltage Detec | |
| K4S281632F-UC75 K4S281632F-UC75 |
SAMSUNG | N/A | 06+ | NOTES: 1. VDD, OPTX, and VDDQX must be set to ap |
| K4S281632F-UC75000 K4S281632F-UC75000 |
SAMSUNG | TSOP | 2006 | Note: Stresses beyond those listed under Absolu |
| K4S281632F-UC75T K4S281632F-UC75T |
4.3 Screening (JANTX and JANTXV levels on | |||
| K4S281632F-UL75 K4S281632F-UL75 |
SAMSUNG | TSOP | 06+ | NOTES: (1) Calibration can minimize these errors |
| K4S281632H-TC75 K4S281632H-TC75 |
SAMSUNG | TSOP | 04+ | The AP1501 series are monolithic IC that design f |
| K4S281632ICU75T K4S281632ICU75T |
The STK12C68-20 requires VCC = 5.0V 5% supply t | |||
| K4S281632I-TC75 K4S281632I-TC75 |
SAMSUNG | tsop | 07+ | Power Diode Module DD25F series are designed for |
| K4S281632IUC60 K4S281632IUC60 |
Each of the three codewheel materials offers a | |||
| K4S281632I-UC60 K4S281632I-UC60 |
SAMSUNG | N/A | 06+ | 1. Renesas Technology Corp. puts the maximum eff |
| K4S281632I-UC60(ROHS128MSDRAM) K4S281632I-UC60(ROHS128MSDRAM) |
A slight pull-in current is generated at the inp | |||
| K4S281632I-UC60ROHS K4S281632I-UC60ROHS |
Modem Control Output For external modem, these p | |||
| K4S281632I-UC60T K4S281632I-UC60T |
SAMSUNG | 08+ | • CASE: Hermetically sealed glass case wit | |
| K4S281632I-UC60TSS K4S281632I-UC60TSS |
A falling edge at pin LIN, followed by a dominan | |||
| K4S281632IUC75 K4S281632IUC75 |
The HC367, HCT367, HC368, and CD74HCT368 silicon | |||
| K4S281632I-UC75 K4S281632I-UC75 |
SAMSUNG | N/A | 06+ | • Up to 60 MIPS at 60MHz core frequency & |
| K4S281632I-UC75000 K4S281632I-UC75000 |
SAMSUNG | 07+ | A continuous pulse input (push and hold) is defin | |
| K4S281632I-UC75T K4S281632I-UC75T |
SAMSUNG | 07/08+ | The functional block diagram on page 1 shows the | |
| K4S281632IUC75T00 K4S281632IUC75T00 |
All rights reserved. Copyright ©2000 Elm El | |||
| K4S281632I-UC75T00 K4S281632I-UC75T00 |
SAM | 07+ | Power DissipationInternally limited Input Volta | |
| K4S281632I-UI75 K4S281632I-UI75 |
SAMSUNG | 08+ | 1500 Watts of Peak Pulse Power at 10/1000 s Prot | |
| K4S281632IUI75000 K4S281632IUI75000 |
Timing is measured at pin threshold, with 50 pF | |||
| K4S281632IUI75T00 K4S281632IUI75T00 |
button supply when a power failure occurs. Func- | |||
| K4S281632IUI75TCV K4S281632IUI75TCV |
Package Description 100-Lead LQFP 100-Lead LQFP | |||
| K4S281632K-UC60 K4S281632K-UC60 |
08+ | Since the ADR512 characteristics resemble those | ||
| K4S281632K-UC75 K4S281632K-UC75 |
SAMSUNG | TSSOP | 08+ | Note 1. 45µA max. (current consumption duri |
| K4S281632KUC75000 K4S281632KUC75000 |
The device is manufactured using Atmels high-den | |||
| K4S281632KUC75T00 K4S281632KUC75T00 |
Battery voltage is monitored by a comparator via | |||
| K4S281632M-TC10 K4S281632M-TC10 |
SAMSUNG | TSOP | 03+ | Notes: 1. R1 is used to optimize the performanc |
| K4S281632M-TC1L K4S281632M-TC1L |
SAMSUNG | TSOP | 03+ | Advantages n Replace expensive hybrid and modul |
| K4S281632M-TC75 K4S281632M-TC75 |
SAMSUNG | TSOP | 03+ | C Stand-alone MP3 Decoder C 48, 44 |
| K4S281632M-TC80 K4S281632M-TC80 |
SAMSUNG | TSOP | 03+ | NOTES: 1. 'X' in part numbers indicates power ra |
| K4S281632M-TL10 K4S281632M-TL10 |
SAMSUNG | TSOP | 03+ | Single Schottky rectifier suited to Switched Mod |
| K4S281632M-TL1H K4S281632M-TL1H |
SAMSUNG | TSOP | 03+ | Notes: 1. The algebraic convention, where most |
| K4S281632M-TL1L K4S281632M-TL1L |
SAMSUNG | TSOP | 03+ | Glass Passivated chip junctions Low Reverse Leak |
| K4S281632M-TL80 K4S281632M-TL80 |
SAMSUNG | TSOP | 03+ | FEATURES Faults detected on 7 independent suppl |
| K4S281633A-BN75000 K4S281633A-BN75000 |
SAMSUNG | BGA | 03+ | The 82C37A allows an external signal to terminat |
| K4S281633D K4S281633D |
BGA128M | 04+ | FULL FLAG ( FF ) The Full Flag (FF) will | |
| K4S281633DR75 K4S281633DR75 |
1Cwire communication using the DS1481 is impossi | |||
| K4S281633D-RL75 K4S281633D-RL75 |
SEC | 06+ | 500 | Blocking voltage : VDRM / VRRM = +/-700V Avalan |
| K4S281633D-RL75(8M16) K4S281633D-RL75(8M16) |
SAMSUNG | BGA | 03+ | High speed instrumentation Scope and logic analy |
| K4S281633DRN75 K4S281633DRN75 |
Communication with the phantom clock is establish | |||
| K4S281633D-RN75 K4S281633D-RN75 |
SAMSUNG | 00+ | Isolation Barrier The isolation barrier consists | |
| K4S281634D K4S281634D |
SEC | BGA | BGA | access for a read or program can begin. The typi |
| K4S281634D-RN15 K4S281634D-RN15 |
01 | These voltage regulators are monolithic integrate | ||
| K4S28163B-TC80 K4S28163B-TC80 |
This evaluation kit being sold by TI is intended | |||
| K4S28163C-TLIL K4S28163C-TLIL |
The measurements of certain performance parameter | |||
| K4S28163DTC75 K4S28163DTC75 |
OUTPUT CHARACTERISTICS Figure 1 and Figure 2 sh | |||
| K4S28163GD K4S28163GD |
TA = 0C to 70C / -40C to 85C (I), unless otherwis | |||
| K4S28163LD K4S28163LD |
SAMSUNG | BGA | 03+ | The MC145532 allows for the encoding and |
| K4S28163LD-RL75 K4S28163LD-RL75 |
||||
| K4S28163LD-RS75 K4S28163LD-RS75 |
NOTES: 1. Dimensions are in inches. &nbs | |||
| K4S28163LQ-BL75T K4S28163LQ-BL75T |
SEC | BGA | 226 | The logic control inputs can be driven up to +3. |
| K4S283232 K4S283232 |
DESCRIPTION The LD1086 is a LOW DROP Voltage Re | |||
| K4S283232ETC60 K4S283232ETC60 |
SAMSUNG | 06+ | The three decades of the intermediate counter ca | |
| K4S283232E-TC60 K4S283232E-TC60 |
SAMSUNG | N/A | 0430+ | Please read Application Note 1 "Gene |
| K4S283232E-TC75 K4S283232E-TC75 |
SAMSUNG | TSOP | 03+ | Description Negative reference for all voltages. |
| K4S283232H-TC60 K4S283232H-TC60 |
SAMSUNG | TSOP | 05+ | The AD9617 offers outstanding performance in hig |
| K4S283233E-DI1H000 K4S283233E-DI1H000 |
SAMSUNG | 03+ | BGA | Maximum ratings are those values beyond which de |
| K4S283233E-DN1H K4S283233E-DN1H |
SAMSUNG | BGA | 2004+ | The Intersil ICL7106 and ICL7107 are high perfor |
| K4S283233E-DN1L K4S283233E-DN1L |
SAMSUNG | BGA | 2003 | The module may be disabled by pulling PC below 2 |
| K4S283233E-DNIL K4S283233E-DNIL |
bit or any arbitrary channels in ESF mode. The s | |||
| K4S283233E-HN1L K4S283233E-HN1L |
SAMSUNG | 04+ | BGA | (Note 9) (Continued) The following spec |
| K4S283233F K4S283233F |
Power-Good Threshold (Input): Analog reference u | |||
| K4S283233F-EN1H K4S283233F-EN1H |
SAMSUNG | 04+ | CioA or B portVCC = 5 V,16 † All typ | |
| K4S283233F-EN75 K4S283233F-EN75 |
SAMSUNG | (SX)computer IC | 03+ | NOTES: 1. All VDD pins must be connected to 3.3V |
| K4S283233F-FN75 K4S283233F-FN75 |
Condition All outputs enabled. Audio clock (pin | |||
| K4S283233F-FN75000 K4S283233F-FN75000 |
SAMSUNG | The K4S283233F-FN75000 EV kit features a selectab | ||
| K4S283233F-HN1H K4S283233F-HN1H |
SANMSUNG | BGA | Bidirectional 4-bit input/output port. Software | |
| K4S283233F-HN1L K4S283233F-HN1L |
SAMSUNG | BGA | 04+ | The power dissipation of the TSOP−6 |
| K4S283233F-HN75 K4S283233F-HN75 |
The A-to-B enable (CEAB) input must be low to e | |||
| K4S283233F-MN1L K4S283233F-MN1L |
SAMSUNG | 04+ | digital or analog input Three 16-bit timer/count | |
| K4S283233F-MN75 K4S283233F-MN75 |
SAMSUNG | BGA | 0404+ | The 50C/W for the D2PAK package assumes th |
| K4S28323F-MN75 K4S28323F-MN75 |
SAMSUNG | (SX)computer IC | 02+ | understand that the LVDS data rate on the cable |
| K4S28323LF-FN75 K4S28323LF-FN75 |
Besides the ac-coupling capacitors C1 through C4 | |||
| K4S28323LF-HN75 K4S28323LF-HN75 |
SAMSUNG | (SX)computer IC | 02+ | S3901/S3904 series do not require any DC voltage |
| K4S41632D-TC1H K4S41632D-TC1H |
While the information presented herein has been | |||
| K4S510432B-TL75 K4S510432B-TL75 |
Samsung | 07+ | Left/right simultaneous volume or channel 1 volum | |
| K4S510732C-TC1L K4S510732C-TC1L |
SAMSUNG | SOP | 2002 | passive LCD panels. • Up to |
| K4S510732C-TL1L K4S510732C-TL1L |
Third-Order IMD Input Voltage Nois | |||
| K4S510732D-TC1L K4S510732D-TC1L |
SAMSUNG | SOP | 2003 | Offset Voltage: 150µV Max Input Bias Curre |
| K4S510732E-TC1L K4S510732E-TC1L |
SAMSUNG | SOP | 2004 | 1. Selection of C1 and D1: C1 is used fo |
| K4S510832B-TC75 K4S510832B-TC75 |
Samsung | 07+ | Initial issue. 1. Note 1 ( Program/Erase Charact | |
| K4S510832D-UC75 K4S510832D-UC75 |
SAMSUNG | 07+ | POWER SUPPLY Supply Voltages AVDD | |
| K4S510832M-TC75 K4S510832M-TC75 |
SAMSUNG | SOP | 2004 | The K4S510832M-TC75 is a monolithic CMOS integra |
| K4S511533C-YN1H K4S511533C-YN1H |
SAMSUNG | The SDA 9188-3X Picture-in-Picture (PIP) process | ||
| K4S511533C-YN1L K4S511533C-YN1L |
SAMSUNG | 00+ | BGA0921 | This reference design is a high efficiency, high |
| K4S511533C-YN80 K4S511533C-YN80 |
SAMSUNG | (SX)computer IC | 04+ | North America Literature Fulfillment: Literature |
| K4S511533F-YL7 K4S511533F-YL7 |
SAMSUNG | (SX)computer IC | 05+ | Hermetic Isolated Surface Mount Package Adjusta |
| K4S511533FYL75 K4S511533FYL75 |
The Si9185 is a 500-mA CMOS LDO (low dropout) vo | |||
| K4S51153LC-YG1L K4S51153LC-YG1L |
SAMSUNG | BGA | Access Time Break-Before-Make Delay Time Enable | |
| K4S51153LC-YGTL K4S51153LC-YGTL |
Design and specifications are subject to ch | |||
| K4S51153LF-YL1L K4S51153LF-YL1L |
Ideally suited for interfacing between lo | |||
| K4S511632 K4S511632 |
DMS (Data Management Software) allows systems to | |||
| K4S511632BTC75 K4S511632BTC75 |
The information in this publication has been care | |||
| K4S511632B-TC75 K4S511632B-TC75 |
三星 | SSOP | SSOP | |
| K4S511632BTC-75 K4S511632BTC-75 |
• Internal or External Reference Voltage Se | |||
| K4S511632BTC75000 K4S511632BTC75000 |
The LM4953 contains advanced pop & click cir | |||
| K4S511632B-TC75000 K4S511632B-TC75000 |
Alternately, you can get accurate time, all the t | |||
| K4S511632B-UC75 K4S511632B-UC75 |
SAM | 05+ | Please be aware that an important notice | |
| K4S511632C-KC1R K4S511632C-KC1R |
Note 11: Skew is defined as the absolute value of | |||
| K4S511632DUC75 K4S511632DUC75 |
Enhanced 2D Graphics Controller Supports pixel | |||
| K4S511632D-UC75 K4S511632D-UC75 |
SAMSUNG | TSOP-54 | 06+ | |
| K4S511632DUC75000 K4S511632DUC75000 |
Reference level for the relative attenuation arel | |||
| K4S511632D-UC75000 K4S511632D-UC75000 |
SAM | 07+ | ||
| K4S511632D-UC75T K4S511632D-UC75T |
SAM | 07+ | Only stops CPUCLK_CS "Complementary" | |
| K4S511632D-UC75T00 K4S511632D-UC75T00 |
SAM | 07+ | JA values shown are typical for standard test PC | |
| K4S511632M-TC/TL75 K4S511632M-TC/TL75 |
Samsung | SOP | TACHYON Architecture Tachyon TS continues with | |
| K4S511632M-TC75 K4S511632M-TC75 |
SAMSUNG | TSOP | 0401+ | The LVDS Repeaters take an LVDS input signal and |
| K4S511633F K4S511633F |
CAUTION: These devices are sensitive to e | |||
| K4S511633F-PF75 K4S511633F-PF75 |
Functions To provide memory addresses. During s | |||
| K4S511633F-PL75 K4S511633F-PL75 |
SAMSUNG | (SX)computer IC | 02+ | Note: 1. Agilents enhancement mode E-pHEMT &nbs |
| K4S511633FYL75 K4S511633FYL75 |
The HIP6601B, HIP6603B and HIP6604B are high- f | |||
| K4S51163LF-PL75 K4S51163LF-PL75 |
SEC | 05+ | BGA11.5*10 | BYTE/WORD PROGRAMMING: Once a memory block is era |
| K4S51163LF-YF75 K4S51163LF-YF75 |
The K4S51163LF-YF75 is a low voltage, NPN Silico | |||
| K4S51163LF-YF75JR K4S51163LF-YF75JR |
The thermal protection circuit shuts off | |||
| K4S51163PF-PF1L K4S51163PF-PF1L |
Variable clock Bidirectional (TTL compatible inp | |||
| K4S51163PF-PF75 K4S51163PF-PF75 |
SAMSUNG | BGA | 05+ | Over the years, the performances of the SLICs c |
| K4S513233C-MP1L K4S513233C-MP1L |
SAMSUNG | BGA | 03+ | |
| K4S513233F-EL1L K4S513233F-EL1L |
SAMSUNG | 06+ | PAE and PAF flags can be programmed indepe | |
| K4S513233FEL75 K4S513233FEL75 |
The MAX5069A controllers internal oscillator cloc | |||
| K4S513233F-EL75 K4S513233F-EL75 |
SAMSUNG | 05+ | BGAp/b | Drain-to-Source Breakdown Voltage Gate Threshol |
| K4S51323LF-EL-75 K4S51323LF-EL-75 |
In order to latch in a new column address, both | |||
| K4S51323PF-EF1L K4S51323PF-EF1L |
1 | SAMSUM | 06+ | (1) If any of the products or technical informat |
| K4S51323PF-EF1LROHS K4S51323PF-EF1LROHS |
The wide operating supply range and high accuracy | |||
| K4S51323PF-MF1L K4S51323PF-MF1L |
SAMSUNG | BGA | 0510+ | Allegro MicroSystems, Inc. reserves the right to |
| K4S51323PF-MF75 K4S51323PF-MF75 |
The input/output pins (I/O1 through I/O16) are p | |||
| K4S51O732C-TC1L K4S51O732C-TC1L |
SOP | SAMSUNG | 2002 | Using these two calibration methods, it is possi |
| K4S51O732D-TC1L K4S51O732D-TC1L |
Serial data input; receives serial data from the | |||
| K4S51O732E-TC1L K4S51O732E-TC1L |
SOP | SAMSUNG | 2004 | The MAX2531 multiband LNA/Mixer IC is opt |
| K4S541632F-TL1H K4S541632F-TL1H |
1.) When operated within the SAFE OPERATING AREA | |||
| K4S560432B-TC1H K4S560432B-TC1H |
SAMSUNG | TSOP | 03+ | This confirms the very low remaining voltage acr |
| K4S560432BTC1L K4S560432BTC1L |
Note 1: Absolute Maximum Ratings indicate limits | |||
| K4S560432C-TB75 K4S560432C-TB75 |
SAMSUNG | TSOP | 03+ | The core of the PLHS501 is a programmable fuse |
| K4S560432C-TC75 K4S560432C-TC75 |
SAMSUNG | TSOP | 03+ | The RC2207 is a monolithic voltage-controlled os |
| K4S560432D-TC75 K4S560432D-TC75 |
SAMSUNG | SOP | 2003 | The 0.057 OHM term takes into account any |
| K4S560432D-TL75 K4S560432D-TL75 |
SAMSUNG | SOP | 2003 | The sensor consists of a precision linear Hall IC |
| K4S560432ETC75 K4S560432ETC75 |
Note: 1. Stress greater than those listed under | |||
| K4S560432E-TC75 K4S560432E-TC75 |
SSOP | SAMSUNG | 03+ | The maximum power that can be safely dissi |
| K4S560432E-TL75 K4S560432E-TL75 |
SAMSUNG | TSOP | 03+ | After the CMX866 has been successfully powered up |
| K4S560832A-TC1H K4S560832A-TC1H |
SAMSUNG | TSOP | 03+ | Hynix HYMD564726(L)8-K/H/L series is unbuffered 1 |
| K4S560832A-TC1L K4S560832A-TC1L |
SAMSUNG | TSOP | 03+ | Proper operation requires the use of two |
| K4S560832A-TC-L1H K4S560832A-TC-L1H |
These devices are positive edge triggered flip-f | |||
| K4S560832B-TC1H K4S560832B-TC1H |
SAMSUNG | TSOP | 03+ | When V CC is out of tolerance, the circuit write |
| K4S560832B-TC75 K4S560832B-TC75 |
SAMSUNG | TSOP | 03+ | The dimensional diagrams below compare th |
| K4S560832B-TC80 K4S560832B-TC80 |
Note: 1.Year date code. 2. 2-digit work week. | |||
| K4S560832C K4S560832C |
KEY FEATURES 350 MHz High Performance Blackfin | |||
| K4S560832C-TB1H K4S560832C-TB1H |
SAMSUNG | TSOP | 03+ | |
| K4S560832C-TC75 K4S560832C-TC75 |
SAMSUNG | TSOP | 03+ | Stresses beyond those listed under absolute maxim |
| K4S560832C-TC75000 K4S560832C-TC75000 |
1. Stresses greater than those listed under " | |||
| K4S560832C-TC7C K4S560832C-TC7C |
SamSung | STK | 2003+ | IGSSGate-to-Source Leakage Forward I |
| K4S560832D-TC75 K4S560832D-TC75 |
SUNSING | TSOP | 03+ | The power dissipation of the SOTC23 is a |
| K4S560832E-TC75 K4S560832E-TC75 |
SAMSUNG | 08+ | The watchdog pulse output (WDPO) utilizes an open | |
| K4S560832E-TC75T00 K4S560832E-TC75T00 |
SAMSUNG | In the XGMII 9-bit mode, the unencoded data are l | ||
| K4S560832E-UC75 K4S560832E-UC75 |
SAMSUNG | TSOP | 06+ | UART channel B Transmit Data or infrared encoder |
| K4S560832H-UC75 K4S560832H-UC75 |
SAMSUNG | 08+ | Figure 3 shows the proper connection of the VRE3 | |
| K4S560832H-UC75000 K4S560832H-UC75000 |
SAMSUNG | 07+ | Dead-time control prevents shoot-through current | |
| K4S561632 K4S561632 |
TSOP54 | Notes: 1. Repetitive Rating : Pulse width limite | ||
| K4S561632A-TC1H K4S561632A-TC1H |
SAMSUNG | TSOP | 03+ | Of the 87 product terms, 80 are for general-purpo |
| K4S561632A-TC1L K4S561632A-TC1L |
Do Not Connect No Internal Connection No Inter | |||
| K4S561632A-TC75 K4S561632A-TC75 |
SAMSUNG | TSOP | 03+ | Time Out Counter. The Time Out is performed by |
| K4S561632A-TL1L K4S561632A-TL1L |
SAMSUNG | TSOP | 03+ | The resistor array is composed of 99 resistive e |
| K4S561632B-TC1H K4S561632B-TC1H |
SAMSUNG | TSOP | 03+ | Eight GLBs, 16 I/O cells, two dedicated inputs a |
| K4S561632B-TC1L K4S561632B-TC1L |
SAMSUNG | TSOP | 03+ | Voltage Referenced to GND V+ IN, COM, NO, NC (N |
| K4S561632B-TC75 K4S561632B-TC75 |
SAMSUNG | TSOP | 03+ | The HY51V(S)16160HG/HGL is the new generation dyn |
| K4S561632B-TL1L K4S561632B-TL1L |
SAMSUNG | TSOP | 03+ | The HRPG uses optical reflective technology pr |
| K4S561632B-TL75 K4S561632B-TL75 |
SAMSUNG | TSOP | 03+ | Pin NamePin TX Data 031 TX Data 147 TX Data 25 |
| K4S561632C-TB75 K4S561632C-TB75 |
SAMSUNG | TSOP | 03+ | DYNAMIC PERFORMANCE Maximum Output Update |
| K4S561632C-TC1H K4S561632C-TC1H |
SAMSUNG | TSSOP-54 | Can be driven by a 4 V power source | |
| K4S561632C-TC1L K4S561632C-TC1L |
SAMSUNG | TSSOP-54 | Notes: 1. For Max. or Min. conditions, use appr | |
| K4S561632C-TC60 K4S561632C-TC60 |
SAMSUNG | TSOP-54 | The CY2313ANZ is a 3.3V buffer designed to distr | |
| K4S561632CTC75 K4S561632CTC75 |
1 ms instruction cycle time Fourteen multi-sourc | |||
| K4S561632C-TC75 K4S561632C-TC75 |
SAMSUNG | SOP | 04+ | The design is based on an ARM7® microprocess |
| K4S561632C-TL1L K4S561632C-TL1L |
SAMSUNG | TSOP | 03+ | Two mailbox registers provide a separate |
| K4S561632C-TL75 K4S561632C-TL75 |
SAM | TSOP54 | 0142+ | The CS5204−x family of linear regula |
| K4S561632C-TL7C K4S561632C-TL7C |
SamSung | STK | 2003+ | 12-CHANNEL GAMMA CORRECTION 10-BIT RESOLUTION D |
| K4S561632D-NC75 K4S561632D-NC75 |
Note 3: When the input voltage at any pin exceeds | |||
| K4S561632D-TC1H K4S561632D-TC1H |
SAMSUNG | TSOP | 03+ | The K4S561632D-TC1H is a monolithic circuit base |
| K4S561632D-TC1L K4S561632D-TC1L |
SAMSUNG | TSOP | 03+ | Performance warranty of products offered on this |
| K4S561632D-TC75 K4S561632D-TC75 |
SAMSUNG | TSOP54 | 04+ | nRF401 is a true single chip UHF transceiver desi |
| K4S561632D-TI75 K4S561632D-TI75 |
04+ | SAM | 350 | † Stresses beyond those listed under absol |
| K4S561632D-TL75 K4S561632D-TL75 |
SAMSUNG | 04+ | SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram | |
| K4S561632D-TL75000 K4S561632D-TL75000 |
The 420LE/B series is designed to protect data l | |||
| K4S561632D-UC75 K4S561632D-UC75 |
SAMSUNG | 07+ | Stresses above those listed under Absolute Maximu | |
| K4S561632D-UI75 K4S561632D-UI75 |
(Continued) • Direct power saving | |||
| K4S561632E K4S561632E |
The CLC031A SMPTE 292M / 259M Digital Video Des | |||
| K4S561632E-NC60 K4S561632E-NC60 |
SAMSUNG | 04+ | TSOP | • 0.5 MICRON CMOS Technology • Typic |
| K4S561632E-NC75 K4S561632E-NC75 |
||||
| K4S561632E-TC60 K4S561632E-TC60 |
SAMSUNG | TSOP | 03+ | Inhibit*: This is an open-collector (open-drain) |
| K4S561632ETC75 K4S561632ETC75 |
Notes: 1. Measurements at 2 GHz with biasing 2.7 | |||
| K4S561632E-TC75 K4S561632E-TC75 |
SAMSUNG | TSOP | 0422+ | Short Circuit Applied to Output When a heavy loa |
| K4S561632E-TC75(16M16) K4S561632E-TC75(16M16) |
The 318 series of decoders receive serial addres | |||
| K4S561632E-TC75000 K4S561632E-TC75000 |
SAMSUNG | 07+ | (ang) -176.77 -176.95 -176.88 -176.62 | |
| K4S561632E-TC75T00 K4S561632E-TC75T00 |
• Microchips Worldwide Web site; http://ww | |||
| K4S561632E-TI75 K4S561632E-TI75 |
SAMSUNG | 734 | Each port has independent control pins; Chip Enab | |
| K4S561632ETI75TCV K4S561632ETI75TCV |
During a READ operation (mode 2 error detection) | |||
| K4S561632E-TL75 K4S561632E-TL75 |
SAMSUNG | TSOP-54 | The K4S561632E-TL75 is a single-chip synthesizer | |
| K4S561632E-TL75000 K4S561632E-TL75000 |
8. Guaranteed by Design. 9. This parameter is | |||
| K4S561632E-UC60 K4S561632E-UC60 |
SAMSUNG | TSOP | 06+ | An active high input from an external circuit wh |
| K4S561632EUC75 K4S561632EUC75 |
?Samsung | 04+ | Notes: 1. Repetitive Rating : Pulse width limite | |
| K4S561632E-UC75 K4S561632E-UC75 |
SAMSUNG | N/A | 06+ | This series of optically coupled isolators consi |
| K4S561632E-UC75000 K4S561632E-UC75000 |
SAMSUNG | The microprocessor can program the a8237 when th | ||
| K4S561632E-UC75ROHS K4S561632E-UC75ROHS |
The CYP15G0401DXA Quad HOTLink II™ Transce | |||
| K4S561632E-UC75T00 K4S561632E-UC75T00 |
Operating temperature range is: C40C to + | |||
| K4S561632E-UC7C K4S561632E-UC7C |
SAMSUNG | 00+ | 66.66MHz clock output for AGP support. AGP-PCI s | |
| K4S561632E-UI75 K4S561632E-UI75 |
SAMSUNG | TSOP | Size (max.): HR151 and HR152 models, case H6 &n | |
| K4S561632EUL75 K4S561632EUL75 |
The HAL 57x, HAL 58x two-wire sensors are monoli | |||
| K4S561632E-UL75 K4S561632E-UL75 |
SAMSUNG | TSOP | 06+ | These full reels are individually barcode labele |
| K4S561632F-TC75 K4S561632F-TC75 |
SAMSUGN | TSOP54 | 05+ | The basic gate function is lined up as Re |
| K4S561632F-TI75 K4S561632F-TI75 |
04/ | SAMSUNG | 600 | - Real Time Monitoring Function - RGB bayer, R |
| K4S561632H-TC75 K4S561632H-TC75 |
The AMC5902 is a monolithic chip with 6 channel | |||
| K4S561632H-UC60 K4S561632H-UC60 |
SAMSUNG | 747 | The serial interface centers on a fourtee | |
| K4S561632H-UC60000 K4S561632H-UC60000 |
SAMSUNG | 07+ | Note: 1. Commercial Product: TA=0 to 70C, otherw | |
| K4S561632HUC60T00 K4S561632HUC60T00 |
The NMH series of industrial temperature range D | |||
| K4S561632HUC75 K4S561632HUC75 |
SAM | 2005 | Generating a sine wave is generally more difficu | |
| K4S561632H-UC75 K4S561632H-UC75 |
SAMSUNG | TSOP-54 | 08+ | |
| K4S561632H-UC75000 K4S561632H-UC75000 |
SAM | 07+ | The serial Command mode allows access to the K4S | |
| K4S561632H-UC75T K4S561632H-UC75T |
SAMSUNG | The data in Table II came from a monolithic bipo | ||
| K4S561632HUC75T00 K4S561632HUC75T00 |
LCD COM/SEG output driving voltage. If internal s | |||
| K4S561632H-UC75T00 K4S561632H-UC75T00 |
SAM | 07+ | Description Core Power Supply +2.5V Core Power | |
| K4S561632H-UI75 K4S561632H-UI75 |
SAMSUNG | 07+ | The activation energy of the failure mechanism is | |
| K4S561632H-UI75000 K4S561632H-UI75000 |
SAM | The output capacitor must meet the requirements | ||
| K4S561632H-UL75 K4S561632H-UL75 |
SAMSUNG | N/A | 06+ | Note 4 The M1 and M2 threshold specifications ar |
| K4S561632J-UC75 K4S561632J-UC75 |
N/A | N/A | N/A | next to the chip pins. A ceramic capacitor of up |
| K4S561632JUC75000 K4S561632JUC75000 |
The Bold specifications apply to the full operat | |||
| K4S561632JUC75T00 K4S561632JUC75T00 |
4300 | SAMSUNG | The MIPS integer unit implements a load/s | |
| K4S561632JUI75000 K4S561632JUI75000 |
Enhanced PCI South Bridge for Desktop, Mobile an | |||
| K4S561633C-RL75 K4S561633C-RL75 |
BGA | 0325+ | The DM562P integrated modem is a two-chipset des | |
| K4S561633C-RN1L K4S561633C-RN1L |
SAM | 02+ | When 16/68# pin is at logic 1 for Intel bus inte | |
| K4S561633CRN75 K4S561633CRN75 |
Wake-up Function for a Microcontroller with Pream | |||
| K4S561633C-RN75 K4S561633C-RN75 |
IC | BGA | 0313+ | 1.8/3.3 V Dual Supply Operation AD9736 SFDR > |
| K4S561633C-TL75 K4S561633C-TL75 |
On the MPC859DSL, the SCC (SCC1) is for e | |||
| K4S561633F K4S561633F |
TSOP | 08+ | 62 powerful instructions Up to 1ms instruction c | |
| K4S561633FXL75 K4S561633FXL75 |
SAMSUNG | 05+ | The LTC1998 is a low battery warning indicator an | |
| K4S561633F-XL75 K4S561633F-XL75 |
SAMSUNG | BGA | 05+ | The 48 dB gain range of the VGA makes these devi |
| K4S561633F-XL75000 K4S561633F-XL75000 |
The K4S561633F-XL75000 is a single chip micro-con | |||
| K4S561633FXN75 K4S561633FXN75 |
The CS8920A implements Plug and Play in ac- cor | |||
| K4S561633F-XN75 K4S561633F-XN75 |
SAMSUNG | BGA | 05+ | Note 4 For a power supply of 5V g10% the worst ca |
| K4S561633F-ZL75 K4S561633F-ZL75 |
SAMSUNG | BGA | 05+ | Because the relationship between measured differe |
| K4S561633RN75 K4S561633RN75 |
SOT-23 parts are shipped in tape. The carrier ta | |||
| K4S56163C-RL75 K4S56163C-RL75 |
Once triggered, the basic pulse duration can be | |||
| K4S56163D-TI75 K4S56163D-TI75 |
5.0, 3.3, OR 3.0V OPERATING VOLTAGE SERIAL INTE | |||
| K4S56163LC-RG75 K4S56163LC-RG75 |
SAMSUNG | BGA | The entry of sections for each group is truly ra | |
| K4S56163LC-RG75T000 K4S56163LC-RG75T000 |
H = High Voltage Level, L = Low Voltage Level, X | |||
| K4S56163LC-RL75 K4S56163LC-RL75 |
||||
| K4S56163LCRS75 K4S56163LCRS75 |
Output Enable, asynchronous input, active LOW. C | |||
| K4S56163LF K4S56163LF |
SAM | BGA | 0446+ | |
| K4S56163LF-XG75 K4S56163LF-XG75 |
SEC | 04+ | BGA8*11 | The TLSI T73LVP20 is a general-purpose LVTTL/LVCM |
| K4S56163LF-ZG75 K4S56163LF-ZG75 |
SAM | BGA-54 | 05+ | The Samsung M390S2858CT1 is a 128M bit x |
| K4S56163PF K4S56163PF |
SAMSUNG | 0619+0552+ | BGA | Note 5: This parameter is guaranteed by design bu |
| K4S56163PF-BG1L K4S56163PF-BG1L |
Samsung | 08+ | The application circuit shows a flyback converte | |
| K4S56163PF-BG1L000 K4S56163PF-BG1L000 |
SAMSUNG | 0511+ | After setting SDP, any attempt to write to the d | |
| K4S56163PF-BG1LT00ROHS K4S56163PF-BG1LT00ROHS |
CURRENT COMMAND (+,-) - are differential inputs f | |||
| K4S56163PFBG75 K4S56163PFBG75 |
Drain-to-Source Breakdown Voltage-200 Gate Thre | |||
| K4S56163PF-BG75 K4S56163PF-BG75 |
SAMSUNG | 05+ | Additional features include thermal shutdown to p | |
| K4S56163PF-RG75 K4S56163PF-RG75 |
0524+ | Additionally, the ASLIC device and ASLAC device | ||
| K4S56163PF-RG75000 K4S56163PF-RG75000 |
ESD (electrostatic discharge) sensitive device. | |||
| K4S563233F-HN75 K4S563233F-HN75 |
SAMSUNG | BGA | 05+ | Notes: 1. See test circuit and waveforms. 2. |
| K4S563233FHN75000 K4S563233FHN75000 |
Wide Operating Voltage Range of 2 V to 6 V Outpu | |||
| K4S56323LF-FN75 K4S56323LF-FN75 |
As shown in the functional block diagram on Page | |||
| K4S56323LF-HN1H K4S56323LF-HN1H |
SAMSUNG | BGA90 | 04+ | In addition, this family is immune to the effect |
| K4S56323LF-HN75 K4S56323LF-HN75 |
SAMSUNG | 06+ | Each of the six clock outputs can come from any o | |
| K4S56323PF-HG75ROHS K4S56323PF-HG75ROHS |
Available in the Texas Instruments NanoStar͐ | |||
| K4S64032E-EC50 K4S64032E-EC50 |
SAM | The following discussion refers to the sc | ||
| K4S6404320-TL1L K4S6404320-TL1L |
High Bandwidth: 150MHz 16-Bit Settling in 150ns | |||
| K4S640432D-TC1L K4S640432D-TC1L |
SAMSUNG | 01+ | The new generation CoolSET™-F3 provides Ac | |
| K4S640432E-TL75 K4S640432E-TL75 |
Input Current, IIN, SCLK Pin Input | |||
| K4S640432F-TC75 K4S640432F-TC75 |
TOSHIBA continually is working to improve | |||
| K4S6408320-TC1L K4S6408320-TC1L |
Gate-to-Source Forward Leakage Gate-to-Source | |||
| K4S6408320-TL1H K4S6408320-TL1H |
(1) LED CURRENT CONTROL The NJU6052 incor | |||
| K4S640832C-TC80 K4S640832C-TC80 |
SAMSUNG | NOTE 1: VI(AIN) is AIN+ − AIN− range | ||
| K4S640832D-TC10 K4S640832D-TC10 |
SAMSUNG | Ioff Supports Partial-Power-Down Mode Operation | ||
| K4S640832D-TC1H K4S640832D-TC1H |
TSOP | 0034+ | The leading-edge 0.15 µm / 0.12 µm C | |
| K4S640832D-TC1L K4S640832D-TC1L |
SAMSUNG | 04+ | This automotive grade product provides a | |
| K4S640832D-TC70 K4S640832D-TC70 |
The bq2000 uses a peak-voltage detection (PVD) sc | |||
| K4S640832D-TC75 K4S640832D-TC75 |
SAMSUNG | TSOP-54 | Operating from a wide-input voltage range of 7 V | |
| K4S640832D-TC80 K4S640832D-TC80 |
SAMSUNG | TSOP-54 | NOTE: EP circuits are designed to meet the DC sp | |
| K4S640832D-TL1H K4S640832D-TL1H |
SAMSUNSG | 0028 | The SG117A Series are 3-terminal positive adjust | |
| K4S640832E-TC1L K4S640832E-TC1L |
SAMSUNG | Port RAM for 32-bit-or-more word systems. Using | ||
| K4S640832E-TC75 K4S640832E-TC75 |
SAMSUNG | TSOP54 | Of course, it is difficult for a microcontroller | |
| K4S640832F-TC1H000 K4S640832F-TC1H000 |
SAMSUNG | 1. Hitachi neither warrants nor grants licenses | ||
| K4S640832F-TC75 K4S640832F-TC75 |
SAMSUNG | DC01+ | Power Diode Module DD60GB series are designed fo | |
| K4S640832F-TC75000 K4S640832F-TC75000 |
02+ | SAMSUNG | 33 | DC Supply Voltage Reverse DC Supply Voltage D |
| K4S640832HTC75 K4S640832HTC75 |
?Samsung | 04+ | NOTES: 1. CPD is used to determine the dynamic | |
| K4S640832H-TC75 K4S640832H-TC75 |
SAMSUNG | TSOP | 04+ | The UCC3808 family offers a variety of package t |
| K4S640832H-UC75 K4S640832H-UC75 |
SAMSUNG | TSOP | In most applications, the transient suppr | |
| K4S640832K-UC75 K4S640832K-UC75 |
The K4S640832K-UC75/MAX6626 combine a temperature | |||
| K4S640832KUC75T00 K4S640832KUC75T00 |
When applying signals to RECIN (rectifier input) | |||
| K4S64132F K4S64132F |
SAM | Complies with the USB HUB Device Class S | ||
| K4S641612E-TC50 K4S641612E-TC50 |
CPUS_STOP# is an asychronous input to the clock s | |||
| K4S641620HTC-60 K4S641620HTC-60 |
Get the insight you need to solve your debugging | |||
| K4S641620HUC-75 K4S641620HUC-75 |
Note) 1. Measuring methods are based on JAPANESE | |||
| K4S641622C-TC10 K4S641622C-TC10 |
Note 6: Care must be taken to ensure TSTC and THT | |||
| K4S641622C-TC80 K4S641622C-TC80 |
The Z86E73/L73/E74/L74 are ROM-based members of | |||
| K4S64162H-TC7000 K4S64162H-TC7000 |
The user has the flexibility of using this devic | |||
| K4S641632 K4S641632 |
SMA | TSOP | DESCRIPTION Dual center tab Schottky rectifier | |
| K4S6416320-TC1H K4S6416320-TC1H |
The Frequency and/or Pulse Width (high or low) o | |||
| K4S6416320-TC1L K4S6416320-TC1L |
At power-up or reset, all sectors are unlocked. | |||
| K4S6416320-TC60 K4S6416320-TC60 |
Maximum ratings are those values beyond wh | |||
| K4S6416320-TC70 K4S6416320-TC70 |
Maximum output deviation is 10% inclusive of trim | |||
| K4S6416320-TC75 K4S6416320-TC75 |
The HSDL-1100 contains a high speed, high effi | |||
| K4S641632C K4S641632C |
The ATF1502ASV macrocell, shown in Figure 1, is | |||
| K4S641632C-TC10 K4S641632C-TC10 |
SAMSUNG | The ADSP-21365/6 includes an on-chip instruction | ||
| K4S641632C-TC1H K4S641632C-TC1H |
SAMSUNG | Following the filter section is a decoder employ | ||
| K4S641632C-TC1L K4S641632C-TC1L |
SAMSUNG | |||
| K4S641632C-TC60 K4S641632C-TC60 |
SAMSUNG | CONDITIONAL ACCESS CONTROL SERVICE COMPONENTS | ||
| K4S641632C-TC70 K4S641632C-TC70 |
SAMSUNG | A0, A1, A2, A3 (Pins 2, 3, 21, 22) Addres | ||
| K4S641632C-TC75 K4S641632C-TC75 |
SAMSUNG | Multi-Protocol Serial Communications Controller | ||
| K4S641632C-TC80 K4S641632C-TC80 |
SAMSUNG | The L4962is mountedin a 16-lead Powerdip plastic | ||
| K4S641632C-TL10 K4S641632C-TL10 |
SAMSUNG | 1. Typical characteristics are at TA = 25oC.2. Fm | ||
| K4S641632C-TL1H K4S641632C-TL1H |
SAMSUNG | Any and all SANYO products described or containe | ||
| K4S641632C-TL1L K4S641632C-TL1L |
SAMSUNG | A 1% resistor must be connected between this pin | ||
| K4S641632C-TL60 K4S641632C-TL60 |
SAMSUNG | TSOP54 | The K4S641632C-TL60 is a low power stereo audio c | |
| K4S641632C-TL70 K4S641632C-TL70 |
SAMSUNG | TSOP54 | n Efficiency up to 92% n Simple and easy to de | |
| K4S641632C-TL80 K4S641632C-TL80 |
SAMSUNG | AH276 are integrated Hall sensors with output dr | ||
| K4S641632D K4S641632D |
SAMSUNG | 30 | 1. Voltage accuracy on 3VDC and triple outputs 3% | |
| K4S641632D-GC75 K4S641632D-GC75 |
Note 1: Absolute maximum ratings are limiting val | |||
| K4S641632D-TC10 K4S641632D-TC10 |
Reset Output. RESET/RESET is an active LOW/HIGH, | |||
| K4S641632D-TC12 K4S641632D-TC12 |
Main CLK(Hz)Under 3.58M14.3M Opera | |||
| K4S641632DTC1H K4S641632DTC1H |
regulator and the load is gained up by the factor | |||
| K4S641632D-TC1H K4S641632D-TC1H |
SAMSUNSG | 00 | ML6XX16 is a high power AlGaAs semiconduct | |
| K4S641632D-TC1H000 K4S641632D-TC1H000 |
When the device is first powered on, it will be | |||
| K4S641632D-TC1K K4S641632D-TC1K |
SEC | TSSOP | Analog-for-the-Digital Age, Application Maestro, | |
| K4S641632DTC1L K4S641632DTC1L |
SAMSUNG | SOP | Address Strobe Input. Used as an address qualifi | |
| K4S641632D-TC1L K4S641632D-TC1L |
SAMSUNG | SOP | 00+ | It is our intention to provide our valued custom |
| K4S641632D-TC60 K4S641632D-TC60 |
SAMSUNSG | 01 | The 300C/W for the SOTC23 package assumes | |
| K4S641632D-TC70 K4S641632D-TC70 |
SAMSUNG | PARAMETER Operating Supply Range Quiescen | ||
| K4S641632DTC75 K4S641632DTC75 |
The ADF7012 is a low power FSK/GFSK/OOK/GOOK/ASK | |||
| K4S641632D-TC75 K4S641632D-TC75 |
SAMSUNG | TSOP-54 | Figure 1 and Table 2 show the maximum board dim | |
| K4S641632D-TC80 K4S641632D-TC80 |
SAMSUNSG | 0142/45 | DYNAMIC PERFORMANCE Maximum Output Update | |
| K4S641632D-TC8000 K4S641632D-TC8000 |
CAUTION ESD (electrostatic discharge) sensitive | |||
| K4S641632D-TCIL K4S641632D-TCIL |
Continuous Drain Current, VGS @ 10V Continuous | |||
| K4S641632D-TI80 K4S641632D-TI80 |
PMC-2001514 (p2) © Copyright PMC-Sierra, | |||
| K4S641632D-TL K4S641632D-TL |
SAMSUNG | TSOP | 00+ | The CY7B951 operates at either of two frequency |
| K4S641632D-TL1H K4S641632D-TL1H |
SAMSUNG | Accuracy (each DAC) Integral linearity e | ||
| K4S641632DTL1L K4S641632DTL1L |
SAMSUNG | TSOP | 001+ | SNT-4A S-817A11APF-CUATFG S-817A12APF-CU |
| K4S641632-D-TL1L K4S641632-D-TL1L |
Supply Voltage Supply Current Output Voltage L | |||
| K4S641632D-TL1L K4S641632D-TL1L |
SAMSUNG | Maximum ratings are those values beyond wh | ||
| K4S641632D-TL80 K4S641632D-TL80 |
SAMSUNG | This low failure rate represents data col | ||
| K4S641632E-TC1H K4S641632E-TC1H |
SAMSUNG | NOTES: (a) For a dual device surface mounted on | ||
| K4S641632E-TC1L K4S641632E-TC1L |
0103+ | NOTES: 1. All typical values are at VCC = 5 V, | ||
| K4S641632E-TC55 K4S641632E-TC55 |
SAMSUNG | Specifications provided in this document superse | ||
| K4S641632E-TC60 K4S641632E-TC60 |
SAMSUNG | TSOP | 01+ | The XRT75VL00D includes a Jitter Attenuator that |
| K4S641632E-TC70 K4S641632E-TC70 |
SAMSUNG | Changes throughout document including the follow | ||
| K4S641632E-TC75 K4S641632E-TC75 |
SAM | TSOP | 01/02+ | Hynix HYMD512G726(L)4M-K/H/L series incorporates |
| K4S641632E-TC80 K4S641632E-TC80 |
SAMSUNG | TSOP | Technology • Positive VCE(ON)Temper | |
| K4S641632E-TCIH K4S641632E-TCIH |
SAMSUNG | TSOP54 | Downstream from these two AND gates are an Exclu | |
| K4S641632E-TI1L K4S641632E-TI1L |
SamSung | STK | 2003+ | The SC16C654B/654DB is pin compatible with the S |
| K4S641632E-TI75 K4S641632E-TI75 |
SAMSUNG | DC0226 | The TLC77xxI is characterized for operation over | |
| K4S641632E-TL1H K4S641632E-TL1H |
SAMSUNG | The LM3519 is a step-up converter for white LED | ||
| K4S641632E-TL1L K4S641632E-TL1L |
SAMSUNG | To achieve the specified performance, pay careful | ||
| K4S641632E-TL60 K4S641632E-TL60 |
n 3 IEEE 1149.1-compatible configurable local sc | |||
| K4S641632E-TL75 K4S641632E-TL75 |
SAMSUNG | DC0533 | Note: (1) The minimum DC input voltage is C0.5V | |
| K4S641632F-60 K4S641632F-60 |
SAMSUNG | TSOP | 99+/04 | Input Termination Center-Tap: Each side of the di |
| K4S641632F-75 K4S641632F-75 |
• Pout>13W, çT>40% @ VDD=12.5 | |||
| K4S641632F-TC1L K4S641632F-TC1L |
The LT®1976 is a 200kHz monolithic buck switc | |||
| K4S641632F-TC50 K4S641632F-TC50 |
SAMSUNG | This IC is 1 chip driv er IC f or spindle | ||
| K4S641632F-TC55 K4S641632F-TC55 |
SAMSUNG | The K4S641632F-TC55 includes an on-chip precision | ||
| K4S641632F-TC60 K4S641632F-TC60 |
Stock item | ★Original and new, Special price! | 08+ | If the I/O is configured as an output, then eith |
| K4S641632F-TC70 K4S641632F-TC70 |
SAMSUNG | Turn-On Delay Time Rise Time Turn-Off Delay Tim | ||
| K4S641632FTC75 K4S641632FTC75 |
The SC16C2550B is pin compatible with the ST16C2 | |||
| K4S641632F-TC75 K4S641632F-TC75 |
SAMSUNG | N/A | 05+ | The simplest approach for generating low-current |
| K4S641632F-TC75(RAM) K4S641632F-TC75(RAM) |
(Unless otherwise indicated, copies of th | |||
| K4S641632F-TC75000 K4S641632F-TC75000 |
allowed to rise, linearly, as this capacitor is | |||
| K4S641632F-TC75TMO K4S641632F-TC75TMO |
SAMSUNG | 06+ | The transmitter accepts CMOS logic level clock ( | |
| K4S641632F-TI60 K4S641632F-TI60 |
SAMSUNG | TSOP54 | The following discussion refers to the sc | |
| K4S641632F-TI70 K4S641632F-TI70 |
The LIS2L02AL has a full scale of 2g and it is | |||
| K4S641632FTI75 K4S641632FTI75 |
sams | sams | dc04 | The SM5009 series are crystal oscillator module |
| K4S641632F-TI75 K4S641632F-TI75 |
The K4S641632F-TI75 is a monolithic CMOS integra | |||
| K4S641632F-TL60 K4S641632F-TL60 |
SAMSUNG | |||
| K4S641632F-TL75 K4S641632F-TL75 |
SAMSUNG | |||
| K4S641632F-TP75000 K4S641632F-TP75000 |
Generates a Regulated Auxiliary Output in Isolate | |||
| K4S641632F-UC75 K4S641632F-UC75 |
SAMSUNG | TSOP | 06+ | NOTES Sample tested during initial |
| K4S641632H K4S641632H |
SAMSUNG | DESCRIPTION Dual center tap rectifier suited fo | ||
| K4S641632H-60 K4S641632H-60 |
When EBEN is high and EA is low all program mem- | |||
| K4S641632H-RN75 K4S641632H-RN75 |
SAM | 04+ | Load current passes through the external current | |
| K4S641632HTC60 K4S641632HTC60 |
SAMSUNG | 06+ | NOTES 1All limits at temperature extremes are gu | |
| K4S641632H-TC60 K4S641632H-TC60 |
SAMSUNG | N/A | 05+;03+ | Features lInternational standard packages lLow |
| K4S641632H-TC60(4MBX16) K4S641632H-TC60(4MBX16) |
ADDRESS STROBE: This is an active high signal us | |||
| K4S641632H-TC60T00 K4S641632H-TC60T00 |
The UCC383 family of low dropout linear (LDO) re | |||
| K4S641632HTC70 K4S641632HTC70 |
VIN (Positive Supply Voltage): This pin supplies | |||
| K4S641632H-TC70 K4S641632H-TC70 |
SAMSUNG | VIN TO IOUT TRANSFER FUNCTION Output Spe | ||
| K4S641632HTC75 K4S641632HTC75 |
SAMSUNG | TSOP | 04+ | |
| K4S641632H-TC75 K4S641632H-TC75 |
SAMSUNG | N/A | 05+ | DESCRIPTION The CENTRAL SEMICONDUCTOR CCLH080 Se |
| K4S641632HTC-75 K4S641632HTC-75 |
SAMSUNG | • Triple Logic Voltage Outputs (Ind | ||
| K4S641632H-TC75(4M16) K4S641632H-TC75(4M16) |
Split supplies of 3.3V and 2.5V are used. The 3.3 | |||
| K4S641632H-TC7500 K4S641632H-TC7500 |
SAMSUNG | IF+, IF C (Pins 2, 3): Differential IF Signal Inp | ||
| K4S641632H-TC75000 K4S641632H-TC75000 |
A fixed precision resistor from this pin to groun | |||
| K4S641632H-TC75T K4S641632H-TC75T |
The JTAG translator feature allows you to access | |||
| K4S641632H-TC75T00 K4S641632H-TC75T00 |
High resolution ADC 24 bits no missing co | |||
| K4S641632HTI60 K4S641632HTI60 |
sam | sam | dc0516 | Low skew: < 200ps Fast switching frequency |
| K4S641632H-TI60 K4S641632H-TI60 |
HN58X25xxx Series is the Serial Peripheral Inter | |||
| K4S641632HTI75 K4S641632HTI75 |
sam | sam | dc0434 | 4. Setting possible during non-induction |
| K4S641632H-TI75 K4S641632H-TI75 |
||||
| K4S641632H-TL75 K4S641632H-TL75 |
SAMSUNG | • Controller Overhead Command to DRQ   | ||
| K4S641632HUC60 K4S641632HUC60 |
The K4S641632HUC60 is a single chip integrated c | |||
| K4S641632H-UC60 K4S641632H-UC60 |
SAMSUNG | N/A | 06+ | The RS-232 receivers convert the EIA RS-232 inp |
| K4S641632H-UC60000 K4S641632H-UC60000 |
While a single output may be used alone (includ- | |||
| K4S641632H-UC70 K4S641632H-UC70 |
SAMSUNG | SOP | 04+ | |
| K4S641632HUC75 K4S641632HUC75 |
?Samsung | 04+ | The ATF1502ASVs flip-flop has very flexible data | |
| K4S641632H-UC75 K4S641632H-UC75 |
SAMSUNG | N/A | 06+ | The 1-wire bus and CPP can provide sufficient pa |
| K4S641632H-UC75000 K4S641632H-UC75000 |
Synchronizer and Baud Rate Selection Linear Rece | |||
| K4S641632H-UL75 K4S641632H-UL75 |
SAMSUNG | TSOP | 06+ | |
| K4S641632H-UP75 K4S641632H-UP75 |
08+ | 35 I/O pins, including nine high-current p | ||
| K4S641632K-TC75 K4S641632K-TC75 |
0549+ | MaverickKey™ IDs • 32-bit unique ID | ||
| K4S641632KUC60 K4S641632KUC60 |
The AD5429/AD5439/AD54491 are CMOS 8-, 10-, and 1 | |||
| K4S641632K-UC60 K4S641632K-UC60 |
SAMSUNG | N/A | 06+ | sFEATURES qOperating Voltage2.8 to 5.5V |
| K4S641632K-UC60- K4S641632K-UC60- |
SAMSUNG | 0640+ | • Low VCE (on) Non Punch Through IGBT Tech | |
| K4S641632K-UC60. K4S641632K-UC60. |
The ST7LITE1 is a member of the ST7 microcon- t | |||
| K4S641632KUC6000 K4S641632KUC6000 |
250-kHz Sampling Rate 4-V, 5-V, 10 V, 3.33-V, 5- | |||
| K4S641632K-UC60000 K4S641632K-UC60000 |
SAMSUNG | 07+ | The 73K322L is ideal for use in either free stand | |
| K4S641632K-UC60T K4S641632K-UC60T |
SAM | 07+ | The PG terminal for the fixed voltage option dev | |
| K4S641632K-UC60T00 K4S641632K-UC60T00 |
SAMSUNG | 07+ | 8-bit up down counter for microprogram-counter D | |
| K4S641632KUC75 K4S641632KUC75 |
The matte tin finish on Sirenzas lead-free packag | |||
| K4S641632K-UC75 K4S641632K-UC75 |
SANSUMG | 05+ | A. These materials are intended as a reference t | |
| K4S641632K-UC75. K4S641632K-UC75. |
Period measurement requires the use of a fast re | |||
| K4S641632K-UC75000 K4S641632K-UC75000 |
SAMSUNG | 07+ | The HY51V(S)17403HG/HGL is the new generation dyn | |
| K4S641632K-UC75T K4S641632K-UC75T |
SAMSUNG | 08+ | The auto-select mode allows the reading of a bina | |
| K4S641632K-UC75T00 K4S641632K-UC75T00 |
SM2 | 06/07+ | Vo Adjust: Using a single resistor, this pin allo | |
| K4S641632K-UI60000 K4S641632K-UI60000 |
Piezo-resistive pressure sensors exhibit excellen | |||
| K4S641632K-UI75 K4S641632K-UI75 |
SAMSUNG 07+ | Members of the Texas Instruments SCOPE Fa | ||
| K4S641632KUI75000 K4S641632KUI75000 |
The transmitter uses an on-chip frequency synthe | |||
| K4S641632K-UP75 K4S641632K-UP75 |
SAM | 07+ | The SN74GTLP22034 is a high-drive, 8-bit, three- | |
| K4S641632M-TL75 K4S641632M-TL75 |
Output voltage is set to a nominal value between | |||
| K4S641632P-TCIL K4S641632P-TCIL |
||||
| K4S641632-TC1H K4S641632-TC1H |
Isolation is provided by an optocoupler with reg | |||
| K4S641632-TC60 K4S641632-TC60 |
Samsung | Disable mode places the device in a sleep state, | ||
| K4S641632-TC75 K4S641632-TC75 |
02 | The PI5A317A is a single-pole single-throw (SPST | ||
| K4S641633C-GC1L K4S641633C-GC1L |
This device contains circuitry to protect | |||
| K4S641633C-GN96 K4S641633C-GN96 |
0.5 MICRON CMOS Technology VCCA = 2.3V to 3.6V | |||
| K4S641633D-GL1H K4S641633D-GL1H |
SAMSUNG | The enhanced configuration device has a 3.3-V co | ||
| K4S641633D-GN96 K4S641633D-GN96 |
This output configuration enables a simple match | |||
| K4S641633F K4S641633F |
SEC | BGA | 02+ | Serial data input pin. Conforms to the SMBUS spec |
| K4S641633F-BN75 K4S641633F-BN75 |
SAMSUNG | 54/BGA | 07+/08+ | 1. Life support devices or systems are devices o |
| K4S641633F-RL75 K4S641633F-RL75 |
Maximum ratings are those values beyond which de | |||
| K4S641633F-RN75 K4S641633F-RN75 |
SAMSUNG | BGA | 2003 | Each XC5200 CLB contains four independent 4-inpu |
| K4S641633H K4S641633H |
SAMSUNG | 07+ | BGA | Power supply voltage VCCs = 2.7 V~3.6 V |
| K4S641633H-BN75 K4S641633H-BN75 |
SAMSUNG | 06+ | BGA | Supply voltage input for left channel and for pr |
| K4S641633H-RN75 K4S641633H-RN75 |
SAMSUNG | The WB mode is similar to the FM mode, but to re | ||
| K4S6416432H-UC75 K4S6416432H-UC75 |
SAMSUGN | TSOP | 05+ | All Data I/O Ports − 5-V Input Down To 3.3 |
| K4S643220DT-6 K4S643220DT-6 |
The submount product may show the change of the | |||
| K4S643223E-TC50 K4S643223E-TC50 |
** Required for stability. Must be rated for 10 | |||
| K4S643232 K4S643232 |
For a zero-scale digital output code, the negati | |||
| K4S6432323F-TC60 K4S6432323F-TC60 |
SAMSUNG | TSSOP | 0331+ | Section is the basic element constituting the c |
| K4S643232C/E-TC60T00 K4S643232C/E-TC60T00 |
||||
| K4S643232C-TC10 K4S643232C-TC10 |
SAMSUNG | TSOP | 04+ | Notes: 1. TC is defined as case temperature, the |
| K4S643232C-TC55 K4S643232C-TC55 |
SAMSUNG | Factor port regardless of whether the host equ | ||
| K4S643232CTC60 K4S643232CTC60 |
SAMSUNG | TSOP | • Low On-Resistance, (16−ohms typ) | |
| K4S643232C-TC60 K4S643232C-TC60 |
SAMSUNG | TSSOP-86 | n 8-channel A/D converter with prescaler and bot | |
| K4S643232C-TC70 K4S643232C-TC70 |
TSOP | 0037+ | • JEDEC registered 1N5985 to 1N6031 ̶ | |
| K4S643232CTC80 K4S643232CTC80 |
The WT6148/ WT6160 is a microcontroller for digit | |||
| K4S643232C-TC80 K4S643232C-TC80 |
SAMSUNG | TSSOP-86 | 2. Power supply lines and grounding may effect t | |
| K4S643232C-TC80T K4S643232C-TC80T |
SAMSUNG | TSOP | 00+ | PCI Bus VIO: This pin should be connected to the |
| K4S643232C-TI80 K4S643232C-TI80 |
SAMSUNG | 04+ | TSOP | If the 3-wire port is used, the master provides o |
| K4S643232E-SEDS K4S643232E-SEDS |
SAMSUNG | FBGA | 01+ | |
| K4S643232E-TC45 K4S643232E-TC45 |
SAMSUNG | Burst Read Accesses The CY7C1350G has an on-chip | ||
| K4S643232ETC50 K4S643232ETC50 |
SAMSUNG | TSOP | The Am186ES/ESLV and Am188ES/ESLV microcontroll | |
| K4S643232E-TC50 K4S643232E-TC50 |
SAM | TSOP | 02+ | The K4S643232E-TC50, K4S643232E-TC50, and K4S643 |
| K4S643232E-TC60 K4S643232E-TC60 |
SAMSUNG | TSOP | 02+ | Propagation Delay Time Clock to Q   |
| K4S643232E-TC-60 K4S643232E-TC-60 |
Note: Agilent Technologies encoders are not r | |||
| K4S643232ETC70 K4S643232ETC70 |
Compliance with PCI Local Bus Specification revi | |||
| K4S643232E-TC70 K4S643232E-TC70 |
SAMSUNG | SOP | 205 | Proven in substantial volumes, this devic |
| K4S643232E-TC75 K4S643232E-TC75 |
Mark/space ratio for the DCLK input is 40 | |||
| K4S643232E-TI60 K4S643232E-TI60 |
These outputs provide access to the outpu | |||
| K4S643232E-TL45 K4S643232E-TL45 |
SAMSUNG | 0343+ | Handle carefully Solder under the following con | |
| K4S643232E-TL50 K4S643232E-TL50 |
B29152/53 are adjustable regulators and maybe pr | |||
| K4S643232E-TL60 K4S643232E-TL60 |
Over Voltage Detection The MX841 will go into a | |||
| K4S643232ETL70 K4S643232ETL70 |
* . Exposure to Absolute Maximum rating condition | |||
| K4S643232E-TL70 K4S643232E-TL70 |
SAMSUNG | 0343+ | The S52xxM is a u-cap 150mA linear voltage regul | |
| K4S643232F-TC45 K4S643232F-TC45 |
SAMSUNG | CAUTION: THIS IS AN ESD SENSITIVE DEVICE The fol | ||
| K4S643232F-TC50 K4S643232F-TC50 |
SAMSUNG | Stress above those listed under Absolute Maximum | ||
| K4S643232FTC60 K4S643232FTC60 |
SAMSUNG | TSOP | 04+ | The ML9266 is a small, high efficiency, and low |
| K4S643232F-TC60 K4S643232F-TC60 |
SAMSUNG | TSOP | 0205+ | NOTE: Intersil Pb-free products employ special Pb |
| K4S643232F-TC60T K4S643232F-TC60T |
Note: 1. H=VIH, L=VIL, X=don't care(VIH or VIL) | |||
| K4S643232F-TC70 K4S643232F-TC70 |
SAMSUNG | 04+ | block write and block read operation from any ext | |
| K4S643232F-TI70 K4S643232F-TI70 |
SAMSUNG | 04+ | TSOP | This is the nonCinverting input of the tr |
| K4S643232F-TL70 K4S643232F-TL70 |
SAMSUNG | 0343+ | 4. In the case of CMOS Output Type: The time int | |
| K4S643232F-TP60 K4S643232F-TP60 |
Operating the two memory banks in an interleaved | |||
| K4S643232F-UC60 K4S643232F-UC60 |
SAMSUNG | TSOP | 03+ | The transmit section of the CY7C9689 HOTLink can |
| K4S643232F-UC70 K4S643232F-UC70 |
SAMSUNG | TSOP | 06+ | Note 2: Guaranteed by design and not production t |
| K4S643232H-7C60 K4S643232H-7C60 |
Note 1: Absolute Maximum Ratings are those values | |||
| K4S643232H-TC50 K4S643232H-TC50 |
SAMSUNSG | The EM78860 is an 8-bit RISC type microprocessor | ||
| K4S643232HTC60 K4S643232HTC60 |
?Samsung | 04+ | POWER SUPPLY Supply Voltages AVDD5 | |
| K4S643232H-TC60 K4S643232H-TC60 |
SAMSUNG | N/A | 06+ | The EM78860 is an 8-bit RISC type microprocessor |
| K4S643232H-TC60000 K4S643232H-TC60000 |
After the software chip erase has been initiated | |||
| K4S643232H-TC60T00 K4S643232H-TC60T00 |
The PHY uses the S5_LKON_DS2 terminal to notify | |||
| K4S643232HTC70 K4S643232HTC70 |
A 2-to-1 multiplexer is provided on each fi | |||
| K4S643232H-TC70 K4S643232H-TC70 |
SAMSUNG | TSOP | The PT5810 Excalibur™ series of int | |
| K4S643232H-TC70000 K4S643232H-TC70000 |
SAMSUNG | 07+ | After power-on-reset, the ATA5275 is in standby | |
| K4S643232H-TC70T00 K4S643232H-TC70T00 |
Note: Stresses greater than those listed under | |||
| K4S643232H-TI60 K4S643232H-TI60 |
Write protection in a user defined section of me | |||
| K4S643232H-TI60000 K4S643232H-TI60000 |
SAM | 07+ | Once the signal is acquired, variation in the st | |
| K4S643232H-TI70 K4S643232H-TI70 |
SAMSUNG | TSOP | 0419+ | New design techniques achieve high efficiency at |
| K4S643232H-TL60 K4S643232H-TL60 |
SAMSUNG | 0343+ | The PFU, PFF, PIC and EBR Blocks are arranged in | |
| K4S643232H-TP60 K4S643232H-TP60 |
Note 2: The algebraic convention, where the most | |||
| K4S643232H-UC50 K4S643232H-UC50 |
SAMSUNG | SSOP | 0619+ | Four Twin GLBs, 16 I/O cells and one ORP are con |
| K4S643232HUC60 K4S643232HUC60 |
2005 | n Up to fourteen multi-source vectored interrupt | ||
| K4S643232H-UC60 K4S643232H-UC60 |
SAMSUNG | N/A | 06+ | o 8-Channel Single-Ended or 4-Channel Di |
| K4S643232H-UC60(232) K4S643232H-UC60(232) |
Dual Channel (LH1501) Isolation test Voltage 3 | |||
| K4S643232H-UC60000 K4S643232H-UC60000 |
The Solutions960® program features a wide var | |||
| K4S643232H-UC60T K4S643232H-UC60T |
SAMSUNG | 07/08+ | To provide long life and to insure soft-s | |
| K4S643232H-UC60T00 K4S643232H-UC60T00 |
Maximum ratings are those values beyond which de | |||
| K4S643232H-UC70 K4S643232H-UC70 |
SAMSUNG | TSOP | 06+ | The status of this pin determines the sampling e |
| K4S643232H-UC70000 K4S643232H-UC70000 |
indicating an overcurrent fault condition has bee | |||
| K4S643232H-UI70 K4S643232H-UI70 |
SAMSUNG 06+ | Typical values at 25C, min, max values are acros | ||
| K4S643232H-UI70T00 K4S643232H-UI70T00 |
The 80C186EB is the first product in a new gener | |||
| K4S643232K-UC60 K4S643232K-UC60 |
Wide Operating VCC Range of 0.8 V to 3.6 V Opti | |||
| K4S643233E-SE K4S643233E-SE |
SAM | TSSOP | SAM | Note: These are stress ratings only. Stresses ex |
| K4S643233E-TC60000 K4S643233E-TC60000 |
For A-to-B data flow, the device operates on the | |||
| K4S643233F-DE75 K4S643233F-DE75 |
SAM | BGA | 03+ | RAM expandable externally to 64 kbytes & |
| K4S643233F-DI75 K4S643233F-DI75 |
SAMSUNG | 03+ | BGA | Device erasure is performed on a block basis and |
| K4S643233F-DNDS K4S643233F-DNDS |
SAMSUNG | BGA | 02/01+ | suitable for Low Noise, Low Power applications |
| K4S643233F-SE75 K4S643233F-SE75 |
SANSUME | BGA | 04+ | Low-power dissipation Operating: 55 mW/MHz (typi |
| K4S643233F-SN75 K4S643233F-SN75 |
The high common-mode input voltage range and th | |||
| K4S643233H K4S643233H |
||||
| K4S643233H-FN75 K4S643233H-FN75 |
SAMSUNG | N/A | The XP162A01B5PR is a P-Channel Power MOS FET wi | |
| K4S643233H-FN750JR K4S643233H-FN750JR |
24 Hour Time If the MIL bit of the HR register | |||
| K4S643233H-HN75 K4S643233H-HN75 |
SAMSUNG | BGA | N/A | Programmable Output Voltage to 36 Volts & |
| K4S643233H-HN75000 K4S643233H-HN75000 |
SAMSUNG | 07+ | Writing to the device is accomplished by taking C | |
| K4S643233H-HNDS K4S643233H-HNDS |
SAMSUNG | 03+ | BGA | The UPC2708T and UPC2711T are Silicon Monolithic |
| K4S643234E-SE10 K4S643234E-SE10 |
SANSUNG | BGA | 0133+ | VDM = 67% VDRM(max);20 Tj = 125 |
| K4S64323F-DE75 K4S64323F-DE75 |
SAMSUNG | BGA | CONDITIONAL ACCESS CONTROL SERVICE COMPONENTS | |
| K4S64323F-TC60 K4S64323F-TC60 |
The Terminal Count (TC) output is HIGH when CET | |||
| K4S64323LF-DK75 K4S64323LF-DK75 |
Abstract A two-stage 1.9GHz monolithic low-noise | |||
| K4S64323LF-DN75 K4S64323LF-DN75 |
SAMSUNG | BGA | 03+ | The HAL 320 is a differential sensor which respo |
| K4S64323LF-SN75 K4S64323LF-SN75 |
BGA | 03+ | Cathode Voltage Continuous Cathode Current Po | |
| K4S64323LH-HN75 K4S64323LH-HN75 |
SAMSUNG | BGA | 05+ | The AD581 can also be used in a two-terminal Zen |
| K4S6A163LF K4S6A163LF |
Please be aware that an important notice |
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